IndiumV3, Main, Repository, bibRecord, 008487

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

Identifieur interne : 008487 ( Main/Repository ); précédent : 008486; suivant : 008488

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

Auteurs : RBID : Pascal:06-0474742

Descripteurs français

Pascal (Inist)
- Courant seuil, Diode laser, Lumière bleue, Rayonnement visible, Fiabilité, Rendement quantique, Puits quantique multiple, Superréseau, Composé binaire, Gallium nitrure, Semiconducteur III-V, Aluminium nitrure, Composé ternaire, Indium nitrure, Vieillissement, Laser semiconducteur, InGaN, Ga N, Al Ga N, Ga In N, Laser InGaN, GaN, AlGaN, Miroir diélectrique, 4255P.

English descriptors

KwdEn :
- Aging, Aluminium nitrides, Binary compounds, Blue light, Gallium nitrides, III-V semiconductors, Indium nitrides, Laser diodes, Multiple quantum well, Quantum yield, Reliability, Semiconductor lasers, Superlattices, Ternary compounds, Threshold current, Visible radiation.

Abstract

In this work we present the reliability study of low dislocation density InGaN laser diodes grown on the top of GaN monocrystalline substrates obtained by high-pressure growth technique. The active region of our lasers consists of an InGaN/InGaN multiple quantum well (MQW) emitting blue light around 415nm, placed between GaN or InGaN guiding layers and GaN/AlGaN superlattices as n- and p-cladding. We discovered two basic mechanisms of degradation in our laser diodes. The first one is characterized by a gradual increase of threshold current and stable behavior of differential quantum efficiency. In case of this mechanism the results showing square root dependence of threshold current during aging suggest that the diffusion of point defects and an enhancement in nonradiative recombination are responsible for degradation processes in our laser diodes The second mechanism leads to a decrease of differential quantum efficiency with threshold current remaining constant. We associate this degradation mode with a gradual deterioration of dielectric mirror coatings.

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Le document en format XML

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<term>Binary compounds</term>
<term>Blue light</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Laser diodes</term>
<term>Multiple quantum well</term>
<term>Quantum yield</term>
<term>Reliability</term>
<term>Semiconductor lasers</term>
<term>Superlattices</term>
<term>Ternary compounds</term>
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<term>Visible radiation</term>
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<term>Diode laser</term>
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<term>Rayonnement visible</term>
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<term>Rendement quantique</term>
<term>Puits quantique multiple</term>
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<term>Composé binaire</term>
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<term>Composé ternaire</term>
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<term>Vieillissement</term>
<term>Laser semiconducteur</term>
<term>InGaN</term>
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<term>Al Ga N</term>
<term>Ga In N</term>
<term>Laser InGaN</term>
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<term>Miroir diélectrique</term>
<term>4255P</term>
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<front><div type="abstract" xml:lang="en">In this work we present the reliability study of low dislocation density InGaN laser diodes grown on the top of GaN monocrystalline substrates obtained by high-pressure growth technique. The active region of our lasers consists of an InGaN/InGaN multiple quantum well (MQW) emitting blue light around 415nm, placed between GaN or InGaN guiding layers and GaN/AlGaN superlattices as n- and p-cladding. We discovered two basic mechanisms of degradation in our laser diodes. The first one is characterized by a gradual increase of threshold current and stable behavior of differential quantum efficiency. In case of this mechanism the results showing square root dependence of threshold current during aging suggest that the diffusion of point defects and an enhancement in nonradiative recombination are responsible for degradation processes in our laser diodes The second mechanism leads to a decrease of differential quantum efficiency with threshold current remaining constant. We associate this degradation mode with a gradual deterioration of dielectric mirror coatings.</div>
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<fC01 i1="01" l="ENG"><s0>In this work we present the reliability study of low dislocation density InGaN laser diodes grown on the top of GaN monocrystalline substrates obtained by high-pressure growth technique. The active region of our lasers consists of an InGaN/InGaN multiple quantum well (MQW) emitting blue light around 415nm, placed between GaN or InGaN guiding layers and GaN/AlGaN superlattices as n- and p-cladding. We discovered two basic mechanisms of degradation in our laser diodes. The first one is characterized by a gradual increase of threshold current and stable behavior of differential quantum efficiency. In case of this mechanism the results showing square root dependence of threshold current during aging suggest that the diffusion of point defects and an enhancement in nonradiative recombination are responsible for degradation processes in our laser diodes The second mechanism leads to a decrease of differential quantum efficiency with threshold current remaining constant. We associate this degradation mode with a gradual deterioration of dielectric mirror coatings.</s0>
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<s5>41</s5>
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<s5>42</s5>
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<s5>47</s5>
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<s5>48</s5>
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<s5>51</s5>
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<s5>51</s5>
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<s5>52</s5>
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<s5>53</s5>
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<s5>53</s5>
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<s2>NK</s2>
<s5>55</s5>
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<s2>NK</s2>
<s5>55</s5>
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<s5>61</s5>
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<s5>61</s5>
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<s5>62</s5>
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<s5>62</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Ga N</s0>
<s4>INC</s4>
<s5>76</s5>
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<s4>INC</s4>
<s5>77</s5>
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<s5>78</s5>
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<s5>83</s5>
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<s5>84</s5>
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<s5>85</s5>
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<s5>86</s5>
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<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>310</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Semiconductor lasers and laser dynamics. Conference</s1>
<s2>2</s2>
<s3>FRA</s3>
<s4>2006</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

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